NVMFD5489NLT3G parameter specification DataSheet and ECAD Model -ICQQG

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Brand:

Model:

NVMFD5489NLT3G

Description:

MOSFET 2N-CH 60V 4.5A DFN8

Stock:

19573

Type:

goods in stock

Store:

Shenzhen/Hong kong

DataSheet:

ECAD Model:

Price：$0.11

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Parameters

Current at 25 ° C - continuous drain (Id)

4.5A

Drain source voltage (Vdss)

60V

FET Type

2 N-channels(two)

FET function

Logic level gate

Gate charge (Qg) at different Vgs (maximum)

12.4nC @ 10V

Input capacitance at different Vds (Ciss) (maximum)

330pF @ 25V

On resistance (maximum) for different Ids and Vgs

65 mΩ @ 15A,10V

Power - maximum

Vgs (th) (maximum) for different Ids

2.5V @ 250µA

packing

TR,bulk

series

Automotive, AEC-Q101

working temperature

-55°C ~ 175°C(TJ)

Encapsulation/Housing

8-PowerTDFN

Warehouse

China/Hong Kong

quality

Original genuine

Installation type

Surface mount

Part status

stop production

DataSheet

下载NVMFD5489NLT3G.pdf

NVMFD5489NLT3G（FET, MOSFET）ByONDesign and production, ICQQG Electronic component purchase website provides sufficient inventory19573,Price reference "real-time change" China/Hongkong。 NVMFD5489NLT3G package/specs, Download NVMFD5489NLT3G、Datasheet。